| PART |
Description |
Maker |
| 2SD2655 2SD655 |
Silicon NPN Transistor
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
|
Hitachi Semiconductor
TOSHIBA[Toshiba Semiconductor]
Rohm
|
| 2SC5279 |
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MT6L04AE |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MT6L04AT |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPEl
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5859 |
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
|
TOSHIBA
|
| RN1611 RN1610 |
TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC6041 |
TOSHIBA Transistor Silicon NPN Triple-Diffused Mesa Type
|
Toshiba Semiconductor
|
| RN1318 RN1314 RN1315 RN1316 RN1317 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Corporation
Toshiba Semiconductor
|
| RN1011 RN1010 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN1209 RN1207 RN1208 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCP8901 |
TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
